1994. 6. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1352
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of h
FE
.
Complementary to KTB989.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification R:40 80 , O:70 140 , Y:120 240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
4
A
Emitter Current
I
E
-4
A
Base Current
I
B
0.4
A
Collector Power Dissipation (Tc=25 )
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
30
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
80
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10mA, I
C
=0
5.0
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=0.5A
40
-
240
h
FE
(2)
V
CE
=5V, I
C
=3A
15
50
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=3A, I
B
=0.3A
-
0.45
1.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=3A
-
1.0
1.5
V
Transition Frequency
f
T
V
CE
=5V, I
C
=0.5A
3.0
8.0
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
90
-
pF
1994. 6. 27
2/2
KTD1352
Revision No : 0
h - I
C
COLLECTOR CURRENT I (A)
0.002
0.01
0.03
0.1
3
FE
DC CURRENT GAIN h
COLLECTOR-EMITTER SATURATION
CE(sat)
0.03
0.1
0.03
0.01
0.003
COLLECTOR CURRENT I (A)
C
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
3
5
10
30
0.1
C
COLLECTOR CURRENT I (A)
FE
C
0.3
1
3
5
5
10
30
50
100
300
500
COLLECTOR POWER DISSIPATION P (W)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
5
10
15
20
25
30
35
40
Tc=Ta
INFINITE HEAT SINK
300 300 2mm Al
HEAT SINK
200 200 2mm Al
HEAT SINK
100 100 2mm Al
HEAT SINK
100 100 1mm Al
HEAT SINK
50 50 2mm Al
HEAT SINK
50 50 1mmFe
HEAT SINK
NO HEAT
SINK
1
2
3
4
5
I MAX(PULSED)
C
*
C
I MAX
V MAX.
CEO
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
1
2
3
4
5
6
0.8
1.6
2.4
3.2
4.0
4.8
COMMON EMITTER
Tc=25 C
240
200
160
120
100
80
60
40
20
I =0mA
B
COMMON EMITTER
V =5V
CE
Tc=75 C
Tc=25 C
Tc=-25 C
CE(sat)
C
VOLTAGE V (V)
0.3
1
3 5
0.05
0.1
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
C B
Tc=25 C
Tc=-25 C
Tc=75 C
25
50
75
100
125
150
175
6
HEAT SINK
100 100 1mm Fe
7
8
HEAT SINK
50 50 1mm Al
9
10
1
2
3
4
5
6
7
8
9
10
100
300
50
0.3
0.5
1
3
5
10
30
50
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
*
(CONTINUOUS)
Tc=
25 C
DC OPE
RAT
ION
*
1s
10
0mS
*
10
mS
*
*
1m
S
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